б/у FGY60T120SQDN IGBT

Ultra Field Stop IGBT,
1200 V, 60 A
FGY60T120SQDN
General Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology
• Maximum Junction Temperature TJ = 175°C
• Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 60 A
• 100% of the Parts Tested for ILM (Note 1)
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Description Value Unit
VCES Collector to Emitter Voltage 1200 V
VGES Gate to Emitter Voltage ±25 V
Transient Gate to Emitter Voltage ±30 V
IC Collector Current @ (TC = 25°C) 120 A
Collector Current @ (TC = 100°C) 60 A
ILM (1) Pulsed Collector Current @ (TC = 25°C) 240 A
ICM (2) Pulsed Collector Current 240 A
IF Diode Forward Current @ (TC = 25°C) 120 A
Diode Forward Current @ (TC=100°C) 60 A
IFM Pulsed Diode Max. Forward Current 240 A
PD Maximum Power Dissipation
@ (TC = 25°C)
@ (TC=100°C)
517
259
W
W
TJ Operating Junction Temperature −55 to +175 °C
Tstg Storage Temperature Range −55 to +175 °C
TL Maximum Lead Temp. For soldering
Purposes, 1/8” from case for 5 seconds
300 °C